BC327-040G
TRANS PNP 45V 0.8A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC327-040G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage (Vce) of 45V and a continuous collector current (Ic) of up to 800mA, this component is suitable for various electronic designs. Its transition frequency (fT) is 260MHz, enabling efficient operation at moderate frequencies. The device offers a minimum DC current gain (hFE) of 250 at 100mA and 1V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 700mV at 50mA and 500mA. Power dissipation is rated at 625mW. The BC327-040G is packaged in a TO-92 (TO-226) through-hole configuration and operates within an ambient temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial controls, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 260MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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