BC309BBU
TRANS PNP 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC309BBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 25 V and a continuous collector current capability of 100 mA. With a transition frequency of 130 MHz, it is suitable for moderate-frequency signal processing. The device offers a minimum DC current gain (hFE) of 180 at 2 mA collector current and 5 V collector-emitter voltage. Its saturation voltage is specified at a maximum of 500 mV at 5 mA base current and 100 mA collector current. The BC309BBU is housed in a TO-92-3 (TO-226AA) through-hole package, rated for a maximum power dissipation of 500 mW and an operating junction temperature of 150°C. This component finds utility in consumer electronics, industrial control systems, and telecommunications equipment. The part number is BC309BBU.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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