BC239BTA
TRANS NPN 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC239BTA is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component features a maximum collector emitter breakdown voltage of 25 V and a continuous collector current capability of 100 mA. It exhibits a transition frequency of 250 MHz and a maximum power dissipation of 500 mW. The DC current gain (hFE) is a minimum of 180 at 2 mA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 600 mV when operating at 5 mA base current and 100 mA collector current. Applications for this transistor include general-purpose amplification and switching circuits in consumer electronics and industrial control systems. The device is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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