BC238CBU
TRANS NPN 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BC238CBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component, housed in a TO-92-3 package, offers a collector-emitter breakdown voltage (Vceo) of 25V and a continuous collector current (Ic) capability of 100mA. The BC238CBU features a transition frequency (fT) of 250MHz and a maximum power dissipation of 500mW. Key electrical parameters include a minimum DC current gain (hFE) of 380 at 2mA collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 600mV maximum at 5mA base current and 100mA collector current. The collector cutoff current (Icbo) is specified at a maximum of 15nA. The device is suitable for industrial and consumer electronics, and communications equipment. This component is provided in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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