BC214LB
TRANS PNP 30V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC214LB is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce(max)) of 30 V. It offers a minimum DC current gain (hFE) of 140 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency (fT) of 200 MHz. The BC214LB has a maximum power dissipation of 625 mW and a Vce(sat) of 600 mV at 5 mA base current and 100 mA collector current. Packaged in a TO-92-3 through-hole configuration, this device is suitable for use in consumer electronics, industrial control systems, and telecommunications infrastructure. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 2mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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