BC212LB
TRANS PNP 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BC212LB is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 100mA. It offers a minimum DC Current Gain (hFE) of 60 at 2mA collector current and 5V collector-emitter voltage. The transistor has a maximum power dissipation of 350mW and a Vce(sat) of 600mV at 5mA base current and 100mA collector current. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the BC212LB operates across a temperature range of -55°C to 150°C. Its specifications make it suitable for use in various industrial and consumer electronics, including power supplies and signal processing circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 350 mW |
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