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6686-2N3906

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6686-2N3906

TRANS PNP 40V 0.2A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N3906 PNP Bipolar Junction Transistor. This through-hole component features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. It offers a minimum DC current gain (hFE) of 100 at 10mA and 1V, with a transition frequency of 250MHz. The device dissipates a maximum of 625mW and is supplied in a TO-92-3 package. Key specifications include a Vce(sat) of 400mV at 5mA/50mA and a collector cutoff current of 50nA. Operating temperature range is -55°C to 150°C. This general-purpose PNP transistor is commonly utilized in switching and amplification applications across various electronic equipment and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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