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30C02MH-TL-H

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30C02MH-TL-H

TRANS NPN 30V 0.7A 3MCPH

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 30C02MH-TL-H is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 700mA. It features a transition frequency of 540MHz and a maximum power dissipation of 600mW. The transistor exhibits a minimum DC current gain (hFE) of 300 at 50mA and 2V, with a Vce(sat) of 190mV at 10mA/200mA. The collector cutoff current is specified at 100nA. Packaged in a 3-MCPH (SC-70, SOT-323) format and supplied on tape and reel, this device is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic190mV @ 10mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 50mA, 2V
Frequency - Transition540MHz
Supplier Device Package3-MCPH
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max600 mW

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