This onsemi NPN Bipolar Junction Transistor (BJT), part number 30C01M-TL-E, is a robust discrete semiconductor designed for general-purpose switching and amplification applications. Featuring a collector-emitter voltage (Vce) rating of 30V and a continuous collector current (Ic) of 0.4A, this device offers reliable performance in demanding operational environments. Its complementary PNP transistor is the 30C02M. The 30C01M-TL-E is commonly utilized in automotive, industrial automation, and consumer electronics for tasks such as motor control, power switching, and signal conditioning. Supplied in bulk packaging, this component provides an efficient solution for high-volume manufacturing needs.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet: