30A01M-TL-E
BIP PNP 0.3A 30VManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 30A01M-TL-E is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector current of up to 300 mA and a collector-emitter breakdown voltage of 30 V. It features a transition frequency of 520 MHz and a maximum power dissipation of 300 mW. The DC current gain (hFE) is a minimum of 200 at 10 mA collector current and 2 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 220 mV at 5 mA base current and 100 mA collector current. The device is housed in a 3-MCP package (SC-70, SOT-323) and operates at temperatures up to 150°C (TJ). This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V |
| Frequency - Transition | 520MHz |
| Supplier Device Package | 3-MCP |
| Grade | - |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
| Qualification | - |
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