2SD734F-AA
NPN EPITAXIAL PLANAR SILICON TRAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD734F-AA is an NPN epitaxial planar silicon transistor. This bipolar junction transistor (BJT) features a collector current capability of 700 mA and a collector-emitter breakdown voltage of 20 V. With a transition frequency of 250 MHz and a power dissipation of 600 mW, it is suitable for applications requiring moderate signal amplification and switching. The device exhibits a minimum DC current gain (hFE) of 160 at 50 mA and 2 V, and a Vce saturation of 300mV at 50 mA and 500 mA. The 2SD734F-AA is packaged in a 3-NP (TO-226-3, TO-92-3) through-hole configuration, making it compatible with traditional PCB assembly processes. It operates reliably at junction temperatures up to 150°C. This component finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 600 mW |