2SD734F
NPN EPITAXIAL PLANAR SILICON TRAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Epitaxial Planar Silicon Transistor, part number 2SD734F. This bipolar junction transistor (BJT) features a 20V collector-emitter breakdown voltage and a maximum collector current of 700mA. It offers a transition frequency of 250MHz and a maximum power dissipation of 600mW. The minimum DC current gain (hFE) is 160 at 50mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 300mV at 50mA base current and 500mA collector current. The device operates at temperatures up to 150°C (TJ) and is available in a through-hole package (TO-226-3, TO-92-3 (TO-226AA)) supplied in bulk. This component is suitable for applications in consumer electronics and general-purpose amplification.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 600 mW |
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