2SD1835T-AA
TRANS NPN 50V 2A 3NPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1835T-AA is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 2A. With a transition frequency of 150MHz and a maximum power dissipation of 750mW, it is suitable for applications requiring moderate switching speeds and power handling. The DC current gain (hFE) is a minimum of 100 at 100mA and 2V. Saturation voltage (Vce(sat)) is specified at 400mV maximum for an Ib of 50mA and Ic of 1A. The device operates across a junction temperature range of up to 150°C. Supplied in a 3-NP package (TO-226-3, TO-92-3), this transistor is commonly utilized in industrial, automotive, and consumer electronics for general-purpose switching and amplification tasks. Packaging for this part is Tape & Box (TB).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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