2SD1835S-AA
TRANS NPN 50V 2A 3NPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1835S-AA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 2A. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 2V, and a transition frequency of 150MHz. The saturation voltage (Vce(sat)) is specified at a maximum of 400mV when driven by 50mA base current and conducting 1A collector current. With a maximum power dissipation of 750mW and an operating junction temperature up to 150°C, this device is suitable for use in consumer electronics, industrial control systems, and power management circuits. The TO-226AA package with formed leads is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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