2SD1835S
TRANS NPN 50V 2A 3NPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1835S is a through-hole NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 150MHz and a maximum power dissipation of 750mW, it offers robust performance. The DC current gain (hFE) is a minimum of 140 at 100mA and 2V. The saturation voltage (Vce Sat) is specified at a maximum of 400mV at 50mA and 1A. This device is housed in a TO-226-3, TO-92-3 (TO-226AA) package, commonly referred to as 3-NP. Typical applications for the onsemi 2SD1835S include consumer electronics, industrial control, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-NP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |