2SD1816T-TL-E
TRANS NPN 100V 4A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1816T-TL-E is a high-performance NPN bipolar junction transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 4A, making it suitable for power switching and amplification circuits. With a transition frequency of 180MHz and a maximum power dissipation of 1W, it delivers efficient operation. The transistor features a low saturation voltage of 400mV at 2A collector current, reducing power loss. Its high DC current gain (hFE) of 200 minimum at 500mA and 5V ensures robust performance. Packaged in a TO-252-3, DPAK (SC-63) surface mount configuration and supplied on tape and reel, the 2SD1816T-TL-E is ideal for use in automotive, industrial control, and power management systems. The device operates within an ambient temperature range of up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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