2SD1816T-H
TRANS NPN 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SD1816T-H is an NPN bipolar junction transistor designed for demanding applications. This component features a 100V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 4A. Its high transition frequency of 180MHz and a power dissipation of 1W make it suitable for switching and amplification circuits. The minimum DC current gain (hFE) is specified at 200 at 500mA and 5V. Saturation voltage (Vce Sat) is a maximum of 400mV at 200mA and 2A. This through-hole mounted device is housed in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package and operates at temperatures up to 150°C. It finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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