2SD1816T-E
TRANS NPN 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1816T-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 100V and a maximum continuous collector current (Ic) of 4A. It features a high DC current gain (hFE) of 200 minimum at 500mA and 5V, and a transition frequency (fT) of 180MHz. The transistor has a maximum power dissipation of 1W and a saturation voltage (Vce(sat)) of 400mV maximum at 200mA collector current and 2A collector current. The 2SD1816T-E is packaged in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) format for through-hole mounting. This device finds application in various industrial and consumer electronics sectors requiring robust power amplification or switching capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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