2SD1816S-TL-H
TRANS NPN 100V 4A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1816S-TL-H is an NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 4A, making it suitable for power switching and amplification tasks. Its 180MHz transition frequency ensures efficient operation in high-frequency circuits. The transistor offers a minimum DC current gain (hFE) of 140 at 500mA and 5V, with a Vce(sat) of 400mV at 200mA and 2A, indicating effective saturation characteristics. Rated for a maximum power dissipation of 1W and an operating junction temperature up to 150°C, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as TP-FA, for surface mounting. This component is commonly utilized in industrial automation, power management, and consumer electronics. The 2SD1816S-TL-H is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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