2SD1816S-H
TRANS NPN 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1816S-H is a high-performance NPN Bipolar Junction Transistor (BJT) designed for robust power switching applications. This through-hole component features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 100 V. With a transition frequency of 180 MHz and a maximum power dissipation of 1 W, it is suitable for demanding tasks. The device exhibits a minimum DC current gain (hFE) of 140 at 500mA and 5V, and a Vce saturation of 400mV at 200mA and 2A, ensuring efficient operation. The 2SD1816S-H, packaged in a TO-251-3 Short Leads (IPAK) format, finds application in automotive, industrial control, and power supply circuits. It operates across a wide temperature range up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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