2SD1816S-E
TRANS NPN 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SD1816S-E is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component offers a collector-emitter breakdown voltage of 100V and can handle a continuous collector current of up to 4A. With a maximum power dissipation of 1W and a transition frequency of 180MHz, it is suitable for use in power supply circuits, motor control, and general industrial applications. The device features a saturation voltage of 400mV at 200mA collector current and 2A collector current. The minimum DC current gain (hFE) is 70 at 500mA collector current and 5V collector-emitter voltage. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |