2SD1815T-TL-H
TRANS NPN 100V 3A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1815T-TL-H is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 3A. It offers a transition frequency of 180MHz and a maximum power dissipation of 1W. Key electrical specifications include a saturation voltage (Vce(sat)) of 400mV at 150mA collector current and 1.5A collector current, and a minimum DC current gain (hFE) of 200 at 500mA collector current and 5V collector-emitter voltage. The collector cutoff current (ICBO) is rated at a maximum of 1µA. The transistor is housed in a TO-252-3, DPAK package and is supplied in tape and reel packaging. This device is suitable for use in power supply circuits, general-purpose amplification, and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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