2SD1815T-H
TRANS NPN 100V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1815T-H is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of up to 3A. It features a maximum power dissipation of 1W and a transition frequency of 180MHz. The device exhibits a minimum DC current gain (hFE) of 200 at 500mA and 5V, with a Vce(sat) of 400mV at 150mA and 1.5A. The 2SD1815T-H is suitable for use in industrial automation, consumer electronics, and power supply circuits. It is supplied in Bulk packaging with a TO-251-3 Short Leads, IPAK, TO-251AA package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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