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2SD1815T-E

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2SD1815T-E

TRANS NPN 100V 3A TP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi 2SD1815T-E is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component offers a collector-emitter breakdown voltage (Vce) of 100V and a continuous collector current (Ic) capability of up to 3A. It features a transition frequency (fT) of 180MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 70 at 500mA and 5V. Typical saturation voltage (Vce(sat)) is 400mV at 150mA and 1.5A. The transistor’s operating junction temperature range is up to 150°C. This component is commonly found in industrial control systems, consumer electronics, and power supply circuits. The package type is TP (TO-251-3 Short Leads, IPAK, TO-251AA).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Frequency - Transition180MHz
Supplier Device PackageTP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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