2SD1815S-TL-H
TRANS NPN 100V 3A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1815S-TL-H is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 3 A. It features a transition frequency of 180 MHz and a maximum power dissipation of 1 W. The DC current gain (hFE) is specified at a minimum of 140 at 500 mA and 5 V. Saturation voltage (Vce) is a maximum of 400 mV at 150 mA and 1.5 A. The collector cutoff current (ICBO) is rated at 1 µA. This device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (TP-FA) format and is supplied on tape and reel. The 2SD1815S-TL-H is commonly utilized in power switching and general-purpose amplification applications across various industrial and consumer electronics sectors. Its operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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