2SD1815S-H
TRANS NPN 100V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1815S-H is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 100 V and a continuous collector current rating of 3 A, this component is suitable for power handling in demanding environments. Its 180 MHz transition frequency allows for efficient operation at moderate frequencies. The device exhibits a minimum DC current gain (hFE) of 140 at 500 mA and 5 V, with a Vce(sat) of 400 mV at 150 mA collector current and 1.5 A collector current. The maximum collector cutoff current (ICBO) is 1 µA. This transistor is supplied in a TP (TO-251-3 Short Leads, IPAK, TO-251AA) package, suitable for through-hole mounting and rated for operation up to 150°C. The 2SD1815S-H finds application in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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