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2SD1815S-E

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2SD1815S-E

TRANS NPN 100V 3A TP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi 2SD1815S-E is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 3A. With a maximum power dissipation of 1W and a transition frequency of 180MHz, it is suitable for applications requiring moderate power handling and switching speeds. The DC current gain (hFE) is specified at a minimum of 70 at 500mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is typically 400mV at 150mA base current and 1.5A collector current. The device is housed in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package, designed for through-hole mounting. The 2SD1815S-E finds application in general-purpose amplification and switching circuits, commonly utilized in industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Frequency - Transition180MHz
Supplier Device PackageTP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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