2SD1805G-TL-E
TRANS NPN 20V 5A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SD1805G-TL-E. This device features a Collector Current (Ic) of up to 5 A and a Collector-Emitter Breakdown Voltage (Vceo) of 20 V. With a maximum power dissipation of 1 W and a transition frequency (fT) of 120 MHz, it is suitable for power switching and amplification applications. The minimum DC current gain (hFE) is 280 at 500mA and 2V. The Vce(sat) is specified at a maximum of 500mV for 60mA base current and 3A collector current. This NPN transistor is housed in a TO-252-3, DPAK surface mount package, supplied on tape and reel. It operates across a junction temperature range up to 150°C and finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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