2SD1805G-E
TRANS NPN 20V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1805G-E is an NPN bipolar junction transistor designed for robust power applications. This through-hole component features a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 20 V. It offers a high DC current gain (hFE) of 280 minimum at 500 mA and 2 V, along with a transition frequency of 120 MHz. The 2SD1805G-E has a maximum power dissipation of 1 W and an operating junction temperature up to 150°C. Its saturation voltage (Vce Sat) is 500 mV maximum at 60 mA base current and 3 A collector current. This device is commonly utilized in power switching, linear amplification, and general-purpose amplification across various industrial, automotive, and consumer electronics sectors. The package type is TO-251-3 Short Leads, IPAK, TO-251AA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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