2SD1805F-E
TRANS NPN 20V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1805F-E is a single NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector current capability of up to 5 A and a collector-emitter breakdown voltage of 20 V. With a transition frequency of 120 MHz, it is suitable for various switching and amplification tasks. The device exhibits a maximum power dissipation of 1 W and operates efficiently across a wide temperature range up to 150°C. Key parameters include a minimum DC current gain (hFE) of 160 at 500 mA and 2 V, and a Vce saturation of 500 mV at 3 A and 60 mA. The 2SD1805F-E is housed in a TO-251-3 Short Leads (IPAK) package, facilitating through-hole mounting. This transistor finds utility in power management, automotive electronics, and general industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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