2SD1803T-TL-E
TRANS NPN 50V 5A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SD1803T-TL-E. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. With a transition frequency of 180MHz and a power dissipation of 1W, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is 200 at 500mA and 2V. Collector-emitter saturation voltage is a maximum of 400mV at 150mA and 3A. The transistor is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, identified as TP-FA by the supplier, and is supplied on tape and reel (TR). This component finds use in power management and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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