2SD1803T-H
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1803T-H is an NPN bipolar junction transistor with a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. This device features a DC current gain (hFE) of at least 200 at 500mA and 2V, and a transition frequency of 180MHz. The saturation voltage (Vce(sat)) is a maximum of 400mV at 150mA and 3A. With a maximum power dissipation of 1W and an operating junction temperature up to 150°C, the 2SD1803T-H is suitable for applications requiring robust performance. The transistor is housed in a TO-251-3 Short Leads, IPAK package with through-hole mounting. This component finds application in various industrial equipment and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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