2SD1803T-E
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2SD1803T-E. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. With a transition frequency of 180MHz and a power dissipation of 1W, it is suitable for applications requiring moderate power handling and switching speeds. The minimum DC current gain (hFE) is 200 at 500mA and 2V. Saturation voltage (Vce(sat)) is specified at 400mV maximum for 150mA base current and 3A collector current. The transistor is available in a TO-251-3 Short Leads, IPAK, TO-251AA package, designed for through-hole mounting. Operating temperature range extends to 150°C (TJ). This component finds application in power supply circuits, motor control, and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |