2SD1803S-H
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1803S-H is a high-performance NPN bipolar junction transistor designed for demanding applications. This through-hole component offers a collector current (Ic) capability of up to 5A and a collector-emitter breakdown voltage (Vce) of 50V. With a transition frequency of 180MHz and a maximum power dissipation of 1W, it is suitable for power switching and amplification circuits. The device exhibits a typical saturation voltage (Vce Sat) of 400mV at 150mA collector current and 3A, and a minimum DC current gain (hFE) of 140 at 500mA collector current and 2V. The onsemi 2SD1803S-H is commonly utilized in industrial automation, power management, and audio amplifier systems. It is supplied in a TO-251-3 Short Leads, IPAK package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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