2SD1802T-E
TRANS NPN 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1802T-E is an NPN bipolar junction transistor (BJT) designed for robust power handling. Featuring a collector current capability of 5A and a collector-emitter breakdown voltage of 50V, this component is suitable for applications requiring significant current switching. It exhibits a transition frequency of 150MHz and a maximum power dissipation of 1W. The device boasts a minimum DC current gain (hFE) of 200 at 100mA and 2V, with a saturation voltage (Vce(sat)) of 500mV at 100mA and 2A. The through-hole mounting, specified by the TP package (TO-251-3 Short Leads, IPAK, TO-251AA), facilitates straightforward board integration. This transistor finds utility in various industrial automation and power supply control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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