2SD1802S-E
TRANS NPN 50V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1802S-E is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 3A. With a transition frequency of 150MHz and a maximum power dissipation of 1W, it offers robust performance in demanding environments. Key specifications include a saturation voltage of 500mV at 100mA/2A and a minimum DC current gain (hFE) of 140 at 100mA/2V. The device operates at temperatures up to 150°C (TJ) and is supplied in a TO-251-3 Short Leads, IPAK package. This transistor finds application in various industrial sectors, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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