2SD1801T-TL-E
TRANS NPN 50V 2A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT), part number 2SD1801T-TL-E, offers robust performance for demanding applications. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A, suitable for power switching and amplification circuits. With a transition frequency of 150MHz and a maximum power dissipation of 800mW, it provides efficient operation. The transistor exhibits a minimum DC current gain (hFE) of 100 at 100mA and 2V. Its saturation voltage (Vce Sat) is a maximum of 400mV at 50mA base current and 1A collector current. The 2SD1801T-TL-E is supplied in a TP-FA package, commonly known as TO-252-3 or DPAK, designed for surface mounting. The operating junction temperature can reach 150°C. This component finds utility in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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