onsemi 2SD1801T-E is a bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This NPN transistor offers a collector-emitter voltage (Vce) of 50V and a continuous collector current (Ic) of 2A, making it suitable for power handling in various electronic systems. The transistor features a TP-FA package, commonly used in through-hole applications. Its robust construction and reliable performance make it a staple in consumer electronics, industrial control systems, and automotive applications where efficient power switching and signal amplification are critical. The 2SD1801T-E provides a dependable solution for designers requiring a high-performance NPN transistor with established reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bag