2SD1801S-TL-E
TRANS NPN 50V 2A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1801S-TL-E is an NPN bipolar junction transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 2A. With a transition frequency of 150MHz and a power dissipation of 800mW, it offers robust performance for various power management and switching tasks. The transistor exhibits a minimum DC current gain (hFE) of 100 at 100mA and 2V. Its saturation voltage (Vce Sat) is a maximum of 400mV at 50mA and 1A. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, supplied as TP-FA and delivered on tape and reel, this component is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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