2SD1801S-E
TRANS NPN 50V 2A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SD1801S-E is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 2A. With a transition frequency of 150MHz and a maximum power dissipation of 800mW, it is suitable for use in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 140 at 100mA and 2V. Saturation voltage is specified at a maximum of 400mV at 50mA collector current and 1A collector current. The 2SD1801S-E is supplied in Bulk packaging with a TO-251-3 Short Leads, IPAK, TO-251AA package type.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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