2SD1685G
TRANS NPN 20V 5A TO126MLManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1685G is an NPN bipolar junction transistor designed for through-hole mounting in a TO-126ML package. This component features a collector current capability of 5A and a collector-emitter breakdown voltage of 20V. The transition frequency is rated at 120MHz, with a maximum power dissipation of 1.5W. It exhibits a minimum DC current gain (hFE) of 280 at 500mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 3A collector current with a 60mA base current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is suitable for applications in industrial and automotive sectors requiring robust switching and amplification capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-126ML |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1.5 W |
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