2SD1685F
TRANS NPN 20V 5A TO126MLManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1685F NPN Bipolar Junction Transistor. This through-hole component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 5A. It features a transition frequency of 120MHz and a power dissipation of 1.5W. The transistor type is NPN, housed in a TO-126ML package. Key electrical parameters include a minimum DC current gain (hFE) of 160 at 500mA and 2V, and a Vce(sat) of 500mV at 60mA and 3A. The maximum collector cutoff current (ICBO) is 100nA. The operating temperature range extends up to 150°C. This device is suitable for applications in power switching and general-purpose amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-126ML |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1.5 W |
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