2SD1683T
TRANS NPN 50V 4A TO126MLManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1683T is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This device features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce) of 50V. With a transition frequency of 150MHz and a maximum power dissipation of 1.5W, it is well-suited for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 100 at 100mA and 2V, with a Vce(sat) of 500mV at 2A collector current and 100mA base current. The transistor operates at an elevated junction temperature of up to 150°C. Packaged in a TO-126ML (TO-225AA) through-hole configuration, the 2SD1683T finds utility in industrial power control, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126ML |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.5 W |
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