2SD1683S
TRANS NPN 50V 4A TO126MLManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1683S is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 4A. With a transition frequency (fT) of 150MHz and a power dissipation of 1.5W, it is suitable for use in industrial controls, power supplies, and consumer electronics. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 2V. Packaged in a TO-126ML (TO-225AA) through-hole package, the 2SD1683S also specifies a saturation voltage (Vce(sat)) of 500mV at 100mA and 2A. It operates at temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126ML |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.5 W |