2SD1628G-TD-H
TRANS NPN 20V 5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1628G-TD-H is an NPN Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector current of up to 5A and a collector-emitter breakdown voltage of 20V. It features a transition frequency of 120MHz and a maximum power dissipation of 500mW. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 500mA and 2V, and a maximum Vce saturation of 500mV at 60mA and 3A. The collector cutoff current (ICBO) is rated at 100nA. Packaged in a TO-243AA (PCP) format on tape and reel, this transistor is suitable for operation up to 150°C. Applications include power management and general-purpose switching in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
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