2SD1628F-TD-E
TRANS NPN 20V 5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1628F-TD-E is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector current capability of up to 5 A and a collector-emitter breakdown voltage of 20 V. Featuring a transition frequency of 120 MHz and a maximum power dissipation of 500 mW, it is suitable for general-purpose amplification and switching. The transistor exhibits a minimum DC current gain (hFE) of 160 at 500 mA and 2 V. Its Vce(sat) is specified at a maximum of 500 mV for a base current of 60 mA and a collector current of 3 A. The device operates at junction temperatures up to 150°C and is supplied in a TO-243AA (PCP) package on tape and reel. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
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