2SD1624S-TD-H
TRANS NPN 50V 3A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SD1624S-TD-H is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. Featuring a transition frequency of 150MHz and a maximum power dissipation of 500mW, it is suitable for use in power switching and amplification circuits. The minimum DC current gain (hFE) is rated at 140 at 100mA and 2V, with a Vce(sat) of 500mV at 100mA and 2A. The device operates within a temperature range of 150°C (TJ) and is supplied in a PCP package on tape and reel. This transistor finds application in various industrial and consumer electronics, including power management and signal control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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