2SD1618T-TD-E
TRANS NPN 15V 0.7A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SD1618T-TD-E is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector current capability of 700 mA and a collector-emitter breakdown voltage of 15 V. With a transition frequency of 250 MHz and a maximum power dissipation of 500 mW, it is suitable for general-purpose amplification and switching in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 200 at 50 mA and 2 V, and a Vce saturation of 80 mV at 10 mA/100 mA. It is supplied in a PCP package on tape and reel, operating at temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
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