2SD1230
POWER BIPOLAR TRANSISTOR NPNManufacturer: onsemi
Categories: Single Bipolar Transistors
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Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20MHz 2.5 W Through Hole TO-3PB
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 8mA, 4A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 4A, 3V |
| Frequency - Transition | 20MHz |
| Supplier Device Package | TO-3PB |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2.5 W |
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