2SD1207U
TRANS NPN 50V 2A 3MPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SD1207U is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 2A. This device features a DC current gain (hFE) of at least 280 at 100mA and 2V, and a transition frequency of 150MHz. The transistor exhibits a Vce saturation of 400mV at 50mA and 1A, with a maximum collector cutoff current of 100nA. Rated for 1W maximum power dissipation, it operates at junction temperatures up to 150°C. Supplied in a TO-226-3, TO-92-3 Long Body (3-MP) package for through-hole mounting, this component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | 3-MP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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